EPA030D updated 11/30/2004 high performance heterojunction dual-gate fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised december 2004 chip thickness: 75 13 microns all dimensions in microns features ? +18.0 dbm output power at 1db compression ? 19.5 db power gain at 12ghz ? 0.3 x 300 micron recessed ?mushroom? dual gate ? si 3 n 4 passivation ? advanced epitaxial doping profile provides extra high performance and high reliability ? mixer, switch, agc and temperature compensation applications ? idss sorted in 5ma per bin range electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression v ds = 6v, i ds 50% i dss, v g2s = 0v f = 12ghz 15.0 18.0 dbm g 1db gain at 1db compression v ds = 6v, i ds 50% i dss, v g2s = 0v f = 12ghz 17.5 19.5 db nf noise figure v ds = 3v, i ds 15ma , v g2s = 0v f = 12ghz 1.2 db ga associated gain v ds = 3v, i ds 15ma , v g2s = 0v f = 12ghz 17.5 db i dss saturated drain current v ds = 3v, v g1s = v g2s = 0 v 30 80 115 ma g m transconductance v ds = 3v, v g1s = -0.5v , v g2s = 0 v 40 70 ms v p1 pinch-off voltage v ds = 3v, i ds = 1.0ma , v g2s = 0 v -1.5 -3.5 v v p2 pinch-off voltage v ds = 3v, i ds = 1.0ma , v g1s = 0 v -1.5 -3.5 v bv g2d gate 2 to drain breakdown voltage i g2d = 1.0ma , gate 1 open -10 -14 v bv g1s gate 1 to source breakdown voltage i g1s = 1.0ma , gate 2 open -6 -12 v r th thermal resistance 125 o c/w
EPA030D updated 11/30/2004 high performance heterojunction dual-gate fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised december 2004 maximum ratings at 25 o c symbol parameters absolute 1 continuours 2 v ds drain to source voltage 10 v 7 v v gs gate to source voltage -6 v -3.5 v i ds drain current idss idss i gsf forward gate current 15 ma 2.5 ma p in input power 15 dbm @ 3db compression p t total power dissipation 1.1 w 900 mw t ch channel temperature 175c 150c t stg storage temperature -65/+175c -65/+150c note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the ab ove ratings may reduce mttf below design goals. s-parameters 6v, 1/2 idss, vg2s=0v freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang (ghz) mag ang mag ang mag ang mag ang 1 0.991 -15.1 9.329 165.6 0.006 80.8 0.943 -5.5 21 0.758 144.0 4.807 -38.8 0.014 65.7 1.161 -107.6 2 0.965 -30.1 9.120 152.7 0.010 74.8 0.932 -11.2 22 0.786 138.7 4.797 -49.7 0.019 65.4 1.233 -114.5 3 0.937 -45.3 8.850 139.8 0.015 62.0 0.912 -16.4 23 0.809 134.2 4.809 -61.7 0.024 80.1 1.339 -122.8 4 0.897 -59.8 8.553 127.4 0.019 55.7 0.891 -21.6 24 0.838 130.0 4.793 -75.3 0.029 82.1 1.437 -133.4 5 0.854 -74.1 8.208 115.3 0.021 47.7 0.868 -26.5 25 0.875 126.4 4.749 -90.2 0.038 83.2 1.520 -144.3 6 0.818 -86.2 7.758 104.8 0.022 43.8 0.854 -30.7 26 0.907 123.2 4.604 -106.9 0.049 77.8 1.664 -158.3 7 0.786 -97.4 7.369 94.9 0.024 37.6 0.840 -34.5 27 0.932 119.3 4.423 -125.2 0.061 71.4 1.720 -173.9 8 0.753 -109.1 7.016 84.8 0.024 31.8 0.828 -38.7 28 0.960 114.9 4.008 -144.6 0.067 62.3 1.688 171.4 9 0.726 -119.9 6.697 75.2 0.024 26.7 0.817 -42.8 29 0.968 111.1 3.527 -163.4 0.071 53.8 1.638 158.6 10 0.699 -130.5 6.409 65.5 0.021 24.0 0.814 -47.2 30 0.952 107.2 3.016 179.0 0.072 45.5 1.555 147.2 11 0.688 -141.1 6.173 56.1 0.020 16.5 0.820 -52.1 31 0.947 103.2 2.587 162.1 0.072 39.9 1.433 137.9 12 0.687 -150.3 5.952 46.6 0.019 11.4 0.823 -58.0 32 0.944 99.6 2.198 145.5 0.074 35.2 1.317 129.4 13 0.684 -160.2 5.720 36.8 0.019 6.6 0.840 -64.0 33 0.951 95.6 1.920 129.5 0.077 32.7 1.227 123.7 14 0.687 -169.4 5.499 27.0 0.015 4.7 0.860 -70.1 34 0.942 92.4 1.619 114.1 0.073 24.8 1.123 117.7 15 0.688 -176.6 5.298 18.1 0.013 15.1 0.879 -76.8 35 0.959 87.8 1.412 98.9 0.075 19.7 1.033 113.6 16 0.715 176.6 5.189 8.0 0.012 13.4 0.923 -82.9 36 0.968 83.2 1.235 85.2 0.076 10.5 0.966 111.9 17 0.731 169.4 4.994 -2.0 0.012 14.7 0.960 -89.6 37 0.976 79.3 1.067 72.1 0.076 2.2 0.893 109.9 18 0.745 163.5 4.850 -11.6 0.012 20.0 0.995 -95.5 38 0.989 76.4 0.936 61.0 0.069 -6.3 0.851 109.1 19 0.774 156.6 4.705 -21.7 0.011 35.6 1.025 -101.1 39 0.985 72.6 0.829 49.0 0.066 -15.8 0.803 108.9 20 0.764 151.0 4.571 -31.0 0.012 42.3 1.093 -106.3 40 0.991 71.5 0.714 38.8 0.056 -21.3 0.785 108.4 note: the data included 0.7 mils diameter au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 s ource wires, 7 mils each., 2 gate2 wires(to ground), 7 mils each
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